Boron Carbide (B4C) Sputtering Targets
Composition: Boron Carbide (B4C)
Catalog No.DPCB5ST
Purity:99.5%Please click 
for discount and other size
- Product Details
Boron Carbide (B4C) sputtering target specifications
Formula: B4C
CAS No.: 12069-32-8
Max. dia. of flat disc sputter target: 8"
Typical lead time of B4C sputtering target: 4 weeks
Regular Dimensions and Price of Boron Carbide (B4C) Sputtering Target
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Product Name |
Reference Price |
|
|
2"dia
x 1/8"t Boron Carbide sputtering target |
$595 | Add to Chart |
|
3"dia
x 1/8"t Boron Carbide sputtering target |
$652 |
Add to Chart |
|
2"dia
x 1/8"t B4C sputtering target with In bonding to Cu bck plt |
$675 |
Add to Chart |
|
3"dia
x 1/8"t B4C sputtering target with In bonding to Cu bck plt |
$787 | Add to Chart |
About Our Sputtering Target
QS Advanced Materials Inc is a professional supplier of custom manufacturered R&D consumptions. Our equipment setup are flexible to meet various demands from wide range of customers for flat disc sputter targets. We are supporting US national labs and worldwide univeristies and researching facilities with our target material and other customized product. Please check here for the list of our other Carbides sputter targets
Sputtering Boron Carbide
Sputtering technique are frequently used to create a thin film of Boron Carbide . The B4C target material is placed on the electrode in the sputtering chamber. Heavy ion particle or laser are frequently used to ejecting coating material from the target, made by Boron Carbide in this case, to create a thin film of B4C on the surface of the substrate.
Boron Carbide Sputtering Target Packaging
QS Advanced Materials Incs sputter targets are vacuum sealed in plastic bags for shipping. We also use heavy foam to protect it. Common documents together with the sputter targets are packing list and analytical report e.g. COA
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